In this paper, a physics based compact model for the longitudinal and transverse stress profile in the channel of an uniaxially strained bulk MOS transistor is presented. The stress in the channel of a MOS transistor is ...

This paper analyzes in detail the carrier transport through the multi stack gate dielectric of High-K Metal gate (HKMG) nMOS transistors under different gate biases and temperatures. The existing uncertainty about the ...

In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted ...