Fast and accurate lithography simulation using cluster analysis in resist model building

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dc.contributor.author Kumar, Pardeep
dc.contributor.author Srinivasan, Babji
dc.contributor.author Mohapatra, Nihar Ranjan
dc.date.accessioned 2015-06-07T08:06:12Z
dc.date.available 2015-06-07T08:06:12Z
dc.date.issued 2015-05
dc.identifier.citation Kumar; Pardeep; Srinivasan; Babji and Mohapatra, Nihar R., “Fast and accurate lithography simulation using cluster analysis in resist model building”, Journal of Micro/Nanolithography, MEMS, and MOEMS, DOI: 10.1117/1.JMM.14.2.023506, vol. 14, no. 2, May 2015. en_US
dc.identifier.issn 1932-5150
dc.identifier.uri http://dx.doi.org/10.1117/1.JMM.14.2.023506
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/1757
dc.description.abstract As technology nodes continue to shrink, optical proximity correction (OPC) has become an integral part of mask design to improve the subwavelength printability. The success of lithography simulation to perform OPC on an entire chip relies heavily on the performance of lithography process models. Any small enhancement in the performance of process models can result in a valuable improvement in the yield. We propose a robust approach for lithography process model building. The proposed scheme uses the clustering algorithm for model building and thereby improves the accuracy and computational efficiency of lithography simulation. The effectiveness of the proposed method is verified by simulating some critical layers in 14- and 22-nm complementary metal oxide semiconductor technology nodes. Experimental results show that compared with a conventional approach, the proposed method reduces the simulation time by 50× with ∼5% improvement in accuracy. en_US
dc.description.statementofresponsibility Pardeep Kumar, Babji Srinivasan and Nihar R.Mohapatra
dc.format.extent Vol. 14, No. 2
dc.language.iso en en_US
dc.publisher SPIE en_US
dc.subject lithography process models en_US
dc.subject Optical proximity correction en_US
dc.title Fast and accurate lithography simulation using cluster analysis in resist model building en_US
dc.type Article en_US
dc.relation.journal Journal of Micro/Nanolithography, MEMS, and MOEMS


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