Modeling of charge and quantum capacitance in low effective mass III-V FinFETs

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dc.contributor.author Ganeriwala, Mohit D.
dc.contributor.author Yadav, Chandan
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.author Khandelwal, Sourabh
dc.date.accessioned 2016-08-19T13:00:27Z
dc.date.available 2016-08-19T13:00:27Z
dc.date.issued 2016-11
dc.identifier.citation Ganeriwala, Mohit D.; Yadav, Chandan; Mohapatra, Nihar R. and Khandelwal, Sourabh, “Modeling of charge and quantum capacitance in low effective mass III-V FinFETs”, IEEE Journal of the Electron Devices Society, DOI: 10.1109/JEDS.2016.2586116, vol. 4, no. 6, pp. 396-401, Nov. 2016.
dc.identifier.issn 2168-6734
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/2423
dc.identifier.uri http://dx.doi.org/10.1109/JEDS.2016.2586116
dc.description.abstract In this paper we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrodinger-Poisson equation for FinFET with various channel thickness and effective mass. en_US
dc.description.statementofresponsibility by Mohit D. Ganeriwala, Chandan Yadav, Nihar R. Mohapatra and Sourabh Khandelwal
dc.format.extent vol. 4, no. 6, pp. 396-401
dc.language.iso en_US en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en_US
dc.subject FinFET en_US
dc.subject III-V en_US
dc.subject SPICE en_US
dc.subject density of states DOS en_US
dc.subject quantum capacitance en_US
dc.subject Computational modeling en_US
dc.subject Effective mass en_US
dc.subject Mathematical model en_US
dc.subject Numerical models en_US
dc.subject Quantum capacitance en_US
dc.subject Semiconductor device modeling en_US
dc.title Modeling of charge and quantum capacitance in low effective mass III-V FinFETs en_US
dc.type Article en_US
dc.relation.journal IEEE Journal of the Electron Devices Society


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