Width and layout dependence of HC and PBTI induced degradation in HKMG nMOS transistors

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dc.contributor.author Duhan, Pardeep
dc.contributor.author Ramgopal Rao, V.
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 2016 IEEE International Reliability Physics Symposium
dc.coverage.spatial Pasadena, US
dc.date.accessioned 2016-12-05T11:03:53Z
dc.date.available 2016-12-05T11:03:53Z
dc.date.issued 2016-04-17
dc.identifier.citation Duhan, Pardeep; Ramgopal Rao, V. and Mohapatra, Nihar R., "Width and layout dependence of HC and PBTI induced degradation in HKMG nMOS transistors", in the 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena Convention Center, Pasadena, US, Apr. 17-21, 2016. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/2558
dc.identifier.uri http://dx.doi.org/10.1109/IRPS.2016.7574649
dc.description.abstract This paper discusses in detail the effects of transistor width and layout on the Hot-Carrier (HC) and Positive Bias Temperature Instability (PBTI) induced degradation in nMOS transistors fabricated using a 28-nm gate-first HKMG CMOS technology. It is observed that the HC and PBTI induced degradation reduces with reduction in the width of HKMG nMOS transistors. The physical mechanisms behind this width dependence are attributed to reduction in the number of defect states in HfO2 for narrow width transistors. It is also shown that the long term reliability of the HKMG nMOS transistors could be further improved by dividing a single active into multiple actives, by increasing the active-to-active spacing and gate pitch. en_US
dc.description.statementofresponsibility by Pardeep Duhan, V. Ramgopal Rao and Nihar R. Mohapatra
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject Degradation en_US
dc.subject Stress en_US
dc.subject MOSFET en_US
dc.subject Logic gates en_US
dc.subject Hafnium compounds en_US
dc.subject Charge carrier processes en_US
dc.title Width and layout dependence of HC and PBTI induced degradation in HKMG nMOS transistors en_US
dc.type Article en_US


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