Short and deep drain MOSFET for space applications: device and circuit level analysis

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dc.contributor.author Surana, Neelam
dc.contributor.author Kaur, Raminder
dc.contributor.author Mekie, Joycee
dc.contributor.other IEEE International conference on Radiation effects on Electronic Components and Systems (RADECS 2016)
dc.coverage.spatial Bremen, DE
dc.date.accessioned 2017-05-09T07:16:24Z
dc.date.available 2017-05-09T07:16:24Z
dc.date.issued 2016-09-19
dc.identifier.citation Surana, Neelam; Kaur, Raminder and Mekie, Joycee, "Short and deep drain MOSFET for space applications: device and circuit level analysis", in IEEE International conference on Radiation effects on Electronic Components and Systems (RADECS 2016), Bremen, DE, Sep. 19-23, 2016. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/2919
dc.identifier.uri http://www.radecs2016.com/joomla/
dc.description.statementofresponsibility by Neelam Surana, Raminder Kaur and Joycee Mekie
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.title Short and deep drain MOSFET for space applications: device and circuit level analysis en_US
dc.type Presentation en_US


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