Atomically thin gallium layers from solid-melt exfoliation

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dc.contributor.author Kochat, Vidya
dc.contributor.author Samanta, Atanu
dc.contributor.author Zhang, Yuan
dc.contributor.author Bhowmick, Sanjit
dc.contributor.author Manimunda, Praveena
dc.contributor.author Asif, Syed Asif S.
dc.contributor.author Stender, Anthony S.
dc.contributor.author Vajtai, Robert
dc.contributor.author Singh, Abhishek K.
dc.contributor.author Tiwary, Chandra S.
dc.contributor.author Ajayan, Pulickel M.
dc.date.accessioned 2018-03-15T06:51:49Z
dc.date.available 2018-03-15T06:51:49Z
dc.date.issued 2018-03
dc.identifier.citation Kochat, Vidya; Samanta, Atanu; Zhang, Yuan; Bhowmick, Sanjit; Manimunda, Praveena; Asif, Syed Asif S.; Stender, Anthony S.; Vajtai, Robert; Singh, Abhishek K.; Tiwary, Chandra S. and Ajayan, Pulickel M., "Atomically thin gallium layers from solid-melt exfoliation", Science Advances, DOI: 10.1126/sciadv.1701373, vol. 4, no. 3, Mar. 2018. en_US
dc.identifier.issn 2375-2548
dc.identifier.uri http://dx.doi.org/10.1126/sciadv.1701373
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/3505
dc.description.abstract Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Using combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin "gallenene" sheets on a silicon substrate, which has two distinct atomic arrangements along crystallographic twin directions of the parent ?-gallium. With a weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the nonlinear dispersive band near the Fermi level, suggesting that gallenene should behave as a metallic layer. Furthermore, it is observed that the strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter, paving the way for using gallenene as promising metallic contacts in 2D devices.
dc.description.statementofresponsibility by Vidya Kochat, Atanu Samanta, Yuan Zhang, Sanjit Bhowmick, Praveena Manimunda, Syed Asif S. Asif, Anthony S.Stender, Robert Vajtai, Abhishek K. Singh, Chandra S. Tiwary and Pulickel M. Ajayan
dc.format.extent vol.4, no.3
dc.language.iso en en_US
dc.publisher American Association for the Advancement of Science en_US
dc.title Atomically thin gallium layers from solid-melt exfoliation en_US
dc.type Article en_US
dc.relation.journal Science Advances


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