Zinc interstitial threshold in Al-doped ZnO film: effect on microstructure and optoelectronic properties

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dc.contributor.author Singh, Chetan C.
dc.contributor.author Panda, Emila
dc.date.accessioned 2018-05-07T12:51:14Z
dc.date.available 2018-05-07T12:51:14Z
dc.date.issued 2018-04
dc.identifier.citation Singh, Chetan C. and Panda, Emila, "Zinc interstitial threshold in Al-doped ZnO film: effect on microstructure and optoelectronic properties", Journal of Applied Physics, DOI: 10.1063/1.5021736, vol. 123, no. 16, Apr. 2018. en_US
dc.identifier.isbn 1089-7550
dc.identifier.issn 0021-8979
dc.identifier.uri http://dx.doi.org/10.1063/1.5021736
dc.identifier.uri http://repository.iitgn.ac.in/handle/123456789/3646
dc.description.abstract In order to know the threshold quantity of the zinc interstitials that contributes to an increase in carrier concentration in the Al-doped ZnO (AZO) films and their effect on the overall microstructure and optoelectronic properties of these films, in this work, Zn-rich-AZO and ZnO thin films are fabricated by adding excess zinc (from a zinc metallic target) during their deposition in RF magnetron sputtering and are then investigated using a wide range of experimental techniques. All these films are found to grow in a ZnO hexagonal wurtzite crystal structure with strong (002) orientation of the crystallites, with no indication of Al2O3, metallic Zn, and Al. The excessively introduced zinc in these AZO and/or ZnO films is found to increase the shallow donor level defects (i.e., zinc interstitials and oxygen-related electronic defect states), which is found to significantly increase the carrier concentration in these films. Additionally, aluminum is seen to enhance the creation of these electronic defect states in these films, thereby contributing more to the overall carrier concentration of these films. However, carrier mobility is found to decrease when the carrier concentration values are higher than 4 × 1020 cm−3, because of the electron-electron scattering. Whereas the optical band gap of the ZnO films is found to increase with increasing carrier concentration because of the Burstein-Moss shift, these decrease for the AZO films due to the band gap narrowing effect caused by excess carrier concentration.
dc.description.statementofresponsibility by Chetan C. Singh and Emila Panda
dc.format.extent vol. 123, no. 16
dc.language.iso en en_US
dc.publisher AIP Publishing en_US
dc.title Zinc interstitial threshold in Al-doped ZnO film: effect on microstructure and optoelectronic properties en_US
dc.type Article en_US
dc.relation.journal Journal of Applied Physics


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