Effect of intrinsic electronic defect states on the morphology and optoelectronic properties of Sn-rich SnS particles

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dc.contributor.author Singh, Chetan C.
dc.contributor.author Panda, Emila
dc.date.accessioned 2018-05-15T10:46:18Z
dc.date.available 2018-05-15T10:46:18Z
dc.date.issued 2018-04
dc.identifier.citation Singh, Chetan C. and Panda, Emila, �Effect of intrinsic electronic defect states on the morphology and optoelectronic properties of Sn-rich SnS particles�, Journal of Applied Physics, DOI: 10.1063/1.4994894, vol. 123, no. 17, Apr. 2018. en_US
dc.identifier.isbn 1089-7550
dc.identifier.issn 0021-8979
dc.identifier.uri http://dx.doi.org/10.1063/1.4994894
dc.identifier.uri http://repository.iitgn.ac.in/handle/123456789/3669
dc.description.abstract A small variation in the elemental composition of a chemical compound can cause the formation of additional electronic defect states in the material, thereby altering the overall microstructure and thus induced properties. In this work, we observed chemical constitution-induced modification in the morphology and optoelectronic properties of SnS. To this end, SnS particles were prepared using the solution chemical route and were characterized using a wide range of experimental techniques, such as x-ray diffractometry, field emission scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS), UV-Vis spectrophotometry, and scanning tunneling spectroscopy (STS). All these SnS particles are found to be Sn-rich and p-type. However, distinctly different morphologies (i.e., flower-like and aggregated ones) are observed. These are then correlated with the electronic defect states, which are induced because of the presence of Sn vacancies, Sn antisites, and/or Sn interstitials. A combination of EDS, XPS, and STS data confirmed the presence of a higher concentration of Sn vacancies along with lower quantities of Sn interstitials and/or antisites in the SnS particles with flower-like morphologies giving rise to higher hole concentration, which subsequently leads to reduced transport, optical band gaps, and barrier heights
dc.description.statementofresponsibility by Chetan C. Singh and Emila Panda
dc.format.extent vol. 123, no. 17
dc.language.iso en en_US
dc.publisher AIP Publishing en_US
dc.title Effect of intrinsic electronic defect states on the morphology and optoelectronic properties of Sn-rich SnS particles en_US
dc.type Article en_US
dc.relation.journal Journal of Applied Physics


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