Simulation and analysis of contact resistance in AIGaN/GaN HEMT devices

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dc.contributor.advisor Mohapatra, Nihar Ranjan
dc.contributor.author Kiran, Chakka Yaswanth Sai
dc.date.accessioned 2019-01-03T10:25:11Z
dc.date.available 2019-01-03T10:25:11Z
dc.date.issued 2018
dc.identifier.citation Kiran, Chakka Yaswanth Sai (2018). Simulation and analysis of contact resistance in AIGaN/GaN HEMT devices. Gandhinagar: Indian Institute of Technology Gandhinagar, pp. 51. (Acc No: T00315).
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/4124
dc.description.statementofresponsibility by Chakka Yaswanth Sai Kiran
dc.format.extent viii, 51 p. : ill. ; 29 cm.
dc.language.iso en_US
dc.publisher Indian Institute of Technology Gandhinagar
dc.subject Semiconductor Devices
dc.title Simulation and analysis of contact resistance in AIGaN/GaN HEMT devices
dc.type Thesis
dc.contributor.department Electrical Engineering
dc.description.degree M.Tech.


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