Back-gate bias and substrate doping influenced substrate effect in UTBB FD-SOI MOS transistors: analysis and optimization guidelines

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dc.contributor.author Bhoir, Mandar S.
dc.contributor.author Chauhan, Yogesh Singh
dc.contributor.author Mohapatra, Nihar Ranjan
dc.date.accessioned 2019-06-18T10:49:52Z
dc.date.available 2019-06-18T10:49:52Z
dc.date.issued 2019-02
dc.identifier.citation Bhoir, Mandar S.; Chauhan, Yogesh Singh and Mohapatra, Nihar R., "Back-gate bias and substrate doping influenced substrate effect in UTBB FD-SOI MOS transistors: analysis and optimization guidelines�, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2018.2888799, vol. 66, no. 2, pp. 861-867, Feb. 2019. en_US
dc.identifier.issn 0018-9383
dc.identifier.issn 1557-9646
dc.identifier.uri https://doi.org/10.1109/TED.2018.2888799
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/4431
dc.description.abstract In this work, we present physical insights into the role of substrate on the anomalous frequency behavior of small-signal trans-conductance and output-conductance in UTBB FDSOI MOS transistors. Using simple DC analysis, we attribute this anomalous behavior to the negative feedback originating from both minority and majority carriers in the substrate at different frequency ranges. Through measurements and detailed TCAD simulations, we have shown that back-gate bias and substrate doping strongly modulate the frequency behavior of trans-conductance and output-conductance. It is finally proposed that circuit/device designers can smartly use the back-gate bias and substrate doping to minimize the Substrate effect and improve the frequency response of device intrinsic gain.
dc.description.statementofresponsibility by Mandar S. Bhoir,Yogesh Singh Chauhan and Nihar R. Mohapatra
dc.format.extent vol. 66, no. 2, pp. 861-867
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.title Back-gate bias and substrate doping influenced substrate effect in UTBB FD-SOI MOS transistors: analysis and optimization guidelines en_US
dc.type Article en_US
dc.relation.journal IEEE Transactions on Electron Devices


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