Copper deficiency induced varying electronic structure and optoelectronic properties of Cu2?xS thin films

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dc.contributor.author Patel, Tvarit
dc.contributor.author Panda, Emila
dc.date.accessioned 2019-06-19T11:12:56Z
dc.date.available 2019-06-19T11:12:56Z
dc.date.issued 2019-09
dc.identifier.citation Patel, Tvarit A. and Panda, Emila, "Copper deficiency induced varying electronic structure and optoelectronic properties of Cu2?xS thin films", Applied Surface Science, DOI: 10.1016/j.apsusc.2019.05.235, vol. 488, pp. 477-484, Sep. 2019. en_US
dc.identifier.issn 0169-4332
dc.identifier.uri https://doi.org/10.1016/j.apsusc.2019.05.235
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/4506
dc.description.abstract Copper sulfide (Cu2-xS) is a class of low-cost, environment friendly p-type semiconductor, where electronic structure and the thus induced optoelectronic properties can be significantly varied through the creation of copper deficiency. To this end, varying composition of Cu2-xS (i.e., Cu2S, Cu1.96S, Cu1.8S, Cu1.8S+ Cu1.6S and CuS) films were grown here by using a low temperature molecular solution based deposition method, following which a wide range of characterization tools were used to understand their microstructure, electronic structure and optoelectronic properties. The hole concentration of these films are found to vary from 3.32?�?1019?cm?3 to 2.54?�?1022?cm?3 as Cu2-xS composition changes from Cu2S to CuS. This is because of the induced Cu deficiency in Cu2-xS films with decreasing Cu/S-molar ratio, which reduced the Cu d-band width in the valence band, thus pushing the Fermi level deep into the valence band. This leads the optical and transport gap to increase from 1.36?eV to 2.23?eV and 1.31?eV to 2.02?eV respectively with increasing copper deficiencies from Cu2S to CuS. Moreover, in this work, both the valence and conduction band edge positions are found to shift negatively with increasing Cu deficiency in these films.
dc.description.statementofresponsibility by Tvarit A. Patel and Emila Panda
dc.format.extent vol. 488, pp. 477-484
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.subject Cu2-xS en_US
dc.subject Electronic structure en_US
dc.subject Copper deficiency en_US
dc.subject Valence band edge en_US
dc.subject Conduction band edge en_US
dc.subject Optoelectronic properties en_US
dc.title Copper deficiency induced varying electronic structure and optoelectronic properties of Cu2?xS thin films en_US
dc.type Article en_US
dc.relation.journal Applied Surface Science


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