A compact model for III–V nanowire electrostatics including band non-parabolicity

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dc.contributor.author Ganeriwala, Mohit D.
dc.contributor.author Ruiz, Francisco G.
dc.contributor.author Marin, Enrique G.
dc.contributor.author Mohapatra, Nihar Ranjan
dc.date.accessioned 2019-08-21T13:11:51Z
dc.date.available 2019-08-21T13:11:51Z
dc.date.issued 2019-08
dc.identifier.citation Ganeriwala, Mohit D.; Ruiz, Francisco G.; Marin, Enrique G. and Mohapatra, Nihar R., “A compact model for III–V nanowire electrostatics including band non-parabolicity”, Journal of Computational Electronics, DOI: 10.1007/s10825-019-01389-1, Aug. 2019. en_US
dc.identifier.issn 1569-8025
dc.identifier.issn 1572-8137
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/4665
dc.identifier.uri https://doi.org/10.1007/s10825-019-01389-1
dc.description.abstract The III–V materials have a highly non-parabolic band structure that significantly affects the MOS transistor electrostatics. The compact models used to simulate circuits involving III–V MOS transistors must account for this band structure non-parabolicity for accurate results. In this work, we propose a modification to the energy dispersion relation to include the band structure non-parabolicity in a way suitable for compact models. Unlike the available non-parabolic energy dispersion relation, the one proposed here is simple and includes the non-parabolicity in both confinement and transport directions. The proposed dispersion relation is then used to model the electrostatics of III–V nanowire transistors. The proposed model is scalable to a higher number of sub-bands and computationally efficient for circuit simulators. The model is also validated with the data from a 2D Poisson–Schrödinger solver for a wide range of nanowire dimensions, III–V channel materials, and found to be in excellent agreement with the simulation data. en_US
dc.language.iso en_US en_US
dc.publisher Springer Nature en_US
dc.subject Non-parabolic bandstructure en_US
dc.subject Nanowire en_US
dc.subject III–V en_US
dc.subject Compact model en_US
dc.subject Charge en_US
dc.subject Surface potential en_US
dc.subject Capacitance en_US
dc.title A compact model for III–V nanowire electrostatics including band non-parabolicity en_US
dc.type Article en_US
dc.relation.journal Journal of Computational Electronics

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