Analog performance and its variability in sub-10nm fin-width FinFETs: a detailed analysis

Show simple item record Bhoir, Mandar S. Chiarella, Thomas Ragnarsson, Lars Ake Mitard, Jerome Terzeiva, Valentina Horiguchi, Naoto Mohapatra, Nihar Ranjan 2019-09-12T06:36:17Z 2019-09-12T06:36:17Z 2019-08
dc.identifier.citation Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars Ake; Mitard, Jerome; Terzeiva, Valentina; Horiguchi, Naoto and Mohapatra, Nihar R., “Analog performance and its variability in sub-10 nm fin-width FinFETs:a detailed analysis”, IEEE Journal of the Electron Devices Society, DOI: 10.1109/JEDS.2019.2934575, vol. 7, pp. 1217-1224, Dec. 2019. en_US
dc.identifier.issn 2168-6734
dc.description.abstract This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the trans-conductance degrades and output conductance improves with the reduction in fin-width. Through different analog performance metrics, it is shown that analog circuit performance, in Sub-10nm Wfin regime, cannot be improved just by Wfin scaling but by optimizing source/drain resistance, gate dielectric thickness together with the Wfin scaling. We also explored the effect of process induced systematic and random variability on trans-conductance and output conductance of FinFETs. A systematic strategy to decouple different variability sources has been discussed and it is shown that mobility, source/drain resistance and oxide thickness are the critical parameters to reduce variability. en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject FinFET en_US
dc.subject sub-10nm fin-width en_US
dc.subject Technology Scaling en_US
dc.subject Analog/RF en_US
dc.subject Variability en_US
dc.subject Trans-conductance en_US
dc.subject Output conductance en_US
dc.subject series resistance en_US
dc.subject Mobility en_US
dc.title Analog performance and its variability in sub-10nm fin-width FinFETs: a detailed analysis en_US
dc.type Article en_US
dc.relation.journal IEEE Journal of the Electron Devices Society

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