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  • Yadav, Chandan; Ganeriwala, Mohit D.; Mohapatra, Nihar Ranjan; Agarwal, Amit; Chauhan, Yogesh Singh (IEEE, 2017-07)
    In this paper, we present a compact model for charge density and gate capacitance for low effective mass channel material based quadruple-gate FETs (QGFETs). The proposed model accounts for the effect of quantum capacitance ...
  • Ganeriwala, Mohit D.; Yadav, Chandan; Mohapatra, Nihar Ranjan; Khandelwal, Sourabh (Institute of Electrical and Electronics Engineers (IEEE), 2016-11)
    In this paper we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed ...

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