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  • Ganeriwala, Mohit D.; Ruiz, Francisco G.; Marin, Enrique G.; Mohapatra, Nihar Ranjan (Springer Nature, 2019-08)
    The III–V materials have a highly non-parabolic band structure that significantly affects the MOS transistor electrostatics. The compact models used to simulate circuits involving III–V MOS transistors must account for ...

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