Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs

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dc.contributor.author Ganeriwala, Mohit D.
dc.contributor.author Ruiz, Francisco G.
dc.contributor.author Marin, Enrique G.
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020)
dc.coverage.spatial Penang, MY
dc.date.accessioned 2020-06-29T14:05:31Z
dc.date.available 2020-06-29T14:05:31Z
dc.date.issued 2020-04-06
dc.identifier.citation Ganeriwala, Mohit D.; Ruiz, Francisco G.; Marin, Enrique G. and Mohapatra, Nihar Ranjan, “Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs”, in the 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020), Penang, MY, Apr. 6-21, 2020. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/5512
dc.description.statementofresponsibility by Mohit D. Ganeriwala, Francisco G. Ruiz, Enrique G. Marin and Nihar Ranjan Mohapatra
dc.language.iso en_US en_US
dc.title Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs en_US
dc.type Article en_US


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