Effects of Small Geometries on the Performance of Gate First High- \kappa Metal Gate NMOS Transistors

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dc.contributor.author Walke, A.M.
dc.contributor.author Mohapatra, Nihar Ranjan
dc.date.accessioned 2014-03-16T14:57:40Z
dc.date.available 2014-03-16T14:57:40Z
dc.date.issued 2012-08
dc.identifier.citation Walke, Amey and Mohapatra, Nihar Ranjan, “Effects of small geometries on the performance of gate first high-κ metal gate NMOS transistors”, IEEE Transaction on Electron Devices, DOI: 10.1109/TED.2012.2208647, vol. 59, no. 10, pp. 2582-2588, Oct. 2012. en_US
dc.identifier.issn 0018-9383
dc.identifier.uri http://dx.doi.org/10.1109/TED.2012.2208647
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/811
dc.description.abstract This paper discusses in detail the effect of small geometries on the performance of NMOS transistors fabricated using a 28-nm gate-first CMOS technology. It is shown that the threshold voltage and transconductance of the NMOS transistors increase with the decrease in the channel width, and this effect is enhanced at shorter gate lengths. PMOS transistors show conventional width dependence. The possible physical mechanisms responsible for this anomalous behavior are identified and explained through detailed measurements. A 2-D charge-distribution-based model is proposed to model this anomalous effect. The accuracy of the proposed model is verified by comparing it with the experimental and simulated data. en_US
dc.description.statementofresponsibility by Amey Walke and Nihar Ranjan Mohapatra
dc.format.extent Vol. 59, No. 10, pp. 2582-2588
dc.language.iso en en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en_US
dc.subject 2D charge-distribution-based model en_US
dc.subject PMOS transistors en_US
dc.subject Anomalous effect en_US
dc.subject Gate first high- κ metal gate NMOS transistors en_US
dc.subject Gate-first CMOS technology en_US
dc.subject Physical mechanisms en_US
dc.subject Small geometries en_US
dc.subject Threshold voltage en_US
dc.subject Transconductance en_US
dc.subject Width dependence en_US
dc.title Effects of Small Geometries on the Performance of Gate First High- \kappa Metal Gate NMOS Transistors en_US
dc.type Article en_US
dc.relation.journal IEEE Transactions on Electron Devices


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