Kaur, SimrandeepSimrandeepKaurGhorai, UnmeshUnmeshGhoraiSamanta, AbhisekAbhisekSamantaWatanabe, KenjiKenjiWatanabeTaniguchi, TakashiTakashiTaniguchiSensarma, RajdeepRajdeepSensarmaBid, AveekAveekBid2025-11-262025-11-262025-10-0110.1103/nm8b-5vgm2-s2.0-105020668442http://repository.iitgn.ac.in/handle/IITG2025/33530We present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Landé g-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting the formation of interaction-driven quantum Hall states. Additionally, we find a rich landscape of LL crossings in the Dirac gully region, accompanied by phase transitions between spin-, gully, and valley-polarized LLs. These experimental observations are successfully modeled using calculations based on optimized tight-binding parameters. Furthermore, our results reveal significant particle-hole asymmetry in the sequence of LLs in the Dirac gullies, attributed to differing g-factor values for electrons and holes. This asymmetry underscores the limitations of noninteracting models in capturing the complexities of multiband systems. This work provides insights into the interplay of symmetry-breaking mechanisms and enhanced interaction effects in Bernal-stacked trilayer graphene, advancing our understanding of quantum transport phenomena in multiband systems.falseSymmetry broken states at high displacement fields in ABA trilayer grapheneArticle246999691-6October 20250L161103WOS:001596721900008