Dutta, SangyaSangyaDuttaKumar, VinayVinayKumarShukla, AdityaAdityaShuklaMohapatra, Nihar R.Nihar R.MohapatraGanguly, UdayanUdayanGanguly2025-08-302025-08-302017-12-0110.1038/s41598-017-07418-y2-s2.0-85027517072http://repository.iitgn.ac.in/handle/IITG2025/2234228811481Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI-MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10¹¹ neuron based) large neural networks.trueArticlehttps://www.nature.com/articles/s41598-017-07418-y.pdf204523221 December 20171818257arJournal174WOS:000407570000134