Bhoir, Mandar S.Mandar S.BhoirMohapatra, Nihar R.Nihar R.Mohapatra2025-08-302025-08-302018-05-03[9781538648117]10.1109/ULIS.2018.83547692-s2.0-85050917310http://repository.iitgn.ac.in/handle/IITG2025/22862This work investigates, for the first time, the impact of BOX thickness (T<inf>box</inf>) and Ground-plane (GP) on the non-linearity of transistors fabricated using UTBB FD-SOI CMOS technology. By extracting 2^nd and 3^rd order harmonic distortions, we have shown that the TBOX scaling and GP improve the transistor linearity at lower drain currents (low-power applications) in advanced FD-SOI technology nodes. The physics behind this observation i.e the additional mobility limiting factors, is explained in detail by using well calibrated TCAD simulations.falseBOX thickness scaling | Ground-plane | linearity | mobility | TCAD | UTBB FD-SOIConference Paper1-43 May 201822