Singh, AishwaryaAishwaryaSinghGaneriwala, Mohit D.Mohit D.GaneriwalaKaur, RamandeepRamandeepKaurMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312022-01-01[9781665491853]10.1109/ICEE56203.2022.101181092-s2.0-85160541417http://repository.iitgn.ac.in/handle/IITG2025/27127This work presents a simplified mathematical method to capture the k.p-based band structure modifications with confinement and device substrate/transport orientation in the compact model of quantum confined Nanosheet FETs. The change in effective mass with confinement is captured in terms of non-parabolic sub-bands. The estimated sub-bands are used to compute inversion charge density and gate capacitance using a bottom-up scalable compact model for different device dimensions and substrate/channel orientations. The accuracy of the proposed method is confirmed using k.p simulation in Global TCAD Solutions (GTS).falsebottom-up scalable compact model | channel orientation | effective mass | k.p based bandstructure | nanosheet FET | non-parabolic subbands | quantum confinementConference Paperhttps://hdl.handle.net/10481/9088420223cpConference Proceeding3