Effects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors

Naresh, Satya SivaSatya SivaNareshMohapatra, Nihar RanjanNihar RanjanMohapatraDuhan, PardeepPardeepDuhan2025-09-042025-09-042005-07-05http://repository.iitgn.ac.in/handle/IITG2025/30770en-USGate lengthHfO2High-k/metal gatesLanthanum Capping LayerNMOSOptimum parametersTungsten silicideEffects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS TransistorsConference PaperConference Paper123456789/493