Chalia, G.G.ChaliaHegde, R. S.R. S.Hegde2025-08-302025-08-302018-10-09[9781538662342]10.1109/EDSSC.2018.84870972-s2.0-85056355824http://repository.iitgn.ac.in/handle/IITG2025/22736The impact of Self-Heating Effect (SHE) on lateral Gate-All-Around (GAA) Nanosheet FET (NSFET) is numerically investigated by comparison of single and multi-channel NSFET with a single-channel FinFET. TCAD results show a 1.8% degradation in ON-current (I<inf>ON</inf>, for a NSFET in comparison to 2.4% for a FinFET with identical footprint and similar OFF-current (I<inf>off</inf>) values. Furthermore, by investigating the effect of geometry scaling on SHE, we conclude that NSFET exhibits better resilience to SHE in comparison to the FinFET.falseFinFET | Gate-all-around | Self heating | Silicon Nanosheet Transistors | Ultra scaled transistorsConference Paper9 October 201811848709710