Enhancing breakdown voltage in Normally-OFF p-GaN HEMTs through ultra-thin AlN barrier layer

Kumar, PriyeshPriyeshKumarSaha, JhumaJhumaSaha2026-03-132026-03-132025-12-1310.1109/ICEE67165.2025.11409721https://repository.iitgn.ac.in/handle/IITG2025/34817en-USHEMTBreakdown voltageElectric fieldUltra-thin barrierEnhancing breakdown voltage in Normally-OFF p-GaN HEMTs through ultra-thin AlN barrier layerConference Paper