Kharwar, SaurabhSaurabhKharwarSinha, SohamSohamSinhaAgarwal, Tarun KumarTarun KumarAgarwal2025-08-312025-08-312024-01-01[9798350371529]10.1109/EDTM58488.2024.105122872-s2.0-85193297291http://repository.iitgn.ac.in/handle/IITG2025/29129This study delves into the improved transport properties of 2D MoS<inf>2</inf> devices with metal contacts achieved through substitutional doping or adsorbed metals. We employed ab initio techniques to thoroughly examine electronic transport behavior. The incorporation of metals into MoS<inf>2</inf> is aimed at enhancing device performance and streamlining charge carrier transport. Our results illuminate the influence of doping on electronic and transport properties, offering valuable guidance for optimizing high-performance 2D metal contact in MoS<inf>2</inf> electronic devices.falseand MoS2 | Density Functional Theory | metal contact | Substitutional doping/adsorptionConference Paper20240cpConference Proceeding0