Patil, ShubhamShubhamPatilSharma, AnandAnandSharmaGaurav, R.R.GauravKadam, AbhishekAbhishekKadamSingh, Ajay KumarAjay KumarSinghLashkare, SandipSandipLashkareMohapatra, Nihar RanjanNihar RanjanMohapatraGanguly, UdayanUdayanGanguly2025-08-312025-08-312024-01-0110.1109/TED.2023.33316602-s2.0-85182392746http://repository.iitgn.ac.in/handle/IITG2025/29158Compact and energy-efficient synapse and neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons in deep neural networks for higher accuracy. Further, process (P), voltage (V), and temperature (T) (PVT) variation are essential considerations for low-power circuits as performance impact and compensation complexities are added costs. Recently, band-to-band tunneling (BTBT) neuron has been demonstrated to operate successfully in a network to enable a liquid state machine (LSM). A comparison of the PVT with competing modes of operation (e.g., BTBT versus subthreshold and above threshold) of the same transistor is a critical factor in assessing performance. In this work, we demonstrate the PVT variation impact on the BTBT regime and benchmark the operation against the subthreshold regime (SS) and ON-regime (ION) of partially depleted silicon-on-insulator MOSFET. It is shown that the ON-state regime offers the lowest variability but dissipates higher power, hence not usable for low-power sources. Among the BTBT and SS regimes, which can enable the low-power neuron, the BTBT regime has shown ∼ 3 × variability reduction (σID/μID) compared to the SS regime, considering the cumulative PVT variability. The improvement is due to the well-known weaker P, V, and T dependence of BTBT versus SS. We show that the BTBT variation is uncorrelated with mutually correlated SS and ION operation-indicating its different origin from the mechanism and location perspectives. Hence, the BTBT regime is promising for low-current, low-power, and low device-to-device (D2D) variability neuron operation.falseBand-to-band-tunneling (BTBT) | neuron | on regime (ION) | process variability | silicon-on-insulator (SOI) | subthreshold regime (SS) | temperature variability | voltage variabilityArticle15579646752-7581 January 20246arJournal6WOS:001123116300001