Panda, Soumyashree S.Soumyashree S.PandaVyas, Hardik S.Hardik S.VyasHegde, Ravi S.Ravi S.Hegde2025-08-312025-08-312020-12-0110.1364/OME.4091862-s2.0-85101742986http://repository.iitgn.ac.in/handle/IITG2025/25672The strong dispersion, ultra-thin form-factor and robustness to degradation make metasurfaces attractive for color filter applications. In particular, transmission-mode filters using silicon could potentially replace conventional color filter arrays in backside-illuminated CMOS image sensors and enable novel multispectral image sensors. We report a robust inversedesign methodology using polygon-shaped, particle and void, meta-atoms. We predict that silicon metasurface transmission-mode primary color (RGB) filters designed with this approach exhibit enhanced color gamut, color purity and intra-pixel color uniformity in comparison to previous reports. The proposed robust inverse design procedure employs multi-island Differential Evolution whose fitness evaluation step uses a statistical model of nanofabrication imperfections. The statistical model can closely recreate the shape variations observed in micrographs of silicon metasurfaces fabricated using electron-beam lithography and is useful in guiding the optimization process towards robust designs.trueRobust inverse design of all-dielectric metasurface transmission-mode color filtersArticlehttps://doi.org/10.1364/ome.409186215939303145-3159December 202027arJournal25WOS:000604910600015