Compact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistors

Mohapatra, Nihar RanjanGaneriwala, Mohit D.Mohit D.Ganeriwala2025-09-042025-09-042020-01-01https://repository.iitgn.ac.in/handle/IITG2025/32193ill.; 30 cm.en-US13210026Electrical EngineeringSemiconductor MaterialsMOS TransistorsCircuit SimulatorsCross-sectional GeometriesCompact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistorsPh.D. Thesesxxii, 123p.123456789/500