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  • Ganeriwala, Mohit D.; Yadav, Chandan; Mohapatra, Nihar Ranjan; Khandelwal, Sourabh (Institute of Electrical and Electronics Engineers (IEEE), 2016-11)
    In this paper we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed ...
  • Ganeriwala, Mohit D.; Yadav, Chandan; Ruiz, Francisco G.; Marin, Enrique G.; Chauhan, Yogesh Singh; Mohapatra, Nihar Ranjan (IEEE, 2017-12)
    In this paper, a physics-based compact model for calculating the semiconductor charges and gate capacitance of III-V nanowire (NW) MOS transistors is presented. The model calculates the subband energies and the semiconductor ...

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