Effects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors

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dc.contributor.author Naresh, Satya Siva
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.author Duhan, Pardeep
dc.contributor.other 2013 International Conference on Solid State Devices and Materials
dc.coverage.spatial Fukuoka, JP
dc.date.accessioned 2014-04-25T08:06:25Z
dc.date.available 2014-04-25T08:06:25Z
dc.date.issued 2013
dc.identifier.citation Naresh, Satya Siva; Mohapatra, Nihar R. and Duhan, Pardeep Kumar, “Effects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors”, in 2013 International Conference on Solid State Devices and Materials, Fukuoka, JP, 2013. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/1198
dc.description.statementofresponsibility by Satya Siva Naresh, Nihar R. Mohapatra and Pardeep Kumar Duhan
dc.language.iso en en_US
dc.subject Gate length en_US
dc.subject HfO2 en_US
dc.subject High-k/metal gates en_US
dc.subject Lanthanum Capping Layer en_US
dc.subject NMOS en_US
dc.subject Optimum parameters en_US
dc.subject Tungsten silicide en_US
dc.title Effects of HfO2 and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors en_US
dc.type Article en_US


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