Terahertz detection with CMOS: Simulation Studies

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dc.contributor.advisor Mohapatra, Nihar Ranjan
dc.contributor.author Jain, Ritesh
dc.date.accessioned 2014-09-16T11:17:40Z
dc.date.available 2014-09-16T11:17:40Z
dc.date.issued 2014-06
dc.identifier.citation Jain, Ritesh (2014). Terahertz detection with CMOS: Simulation Studies (M. Tech. Dissertations). Indian Institute of Technology, Gandhinagar, pp. 83 (Acc No: T00028) en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/1405
dc.description.abstract ‘Terahertz gap’ refers to the still widely un-utilised part of electromagnetic spectrum. EM waves in THz frequency range have great uses in areas like security and inspection, spectroscopy and material dentification, medical diagnosis and high-speed communication. These applications can be efficiently realized only if inexpensive sources and detectors operating at such frequencies are developed. Silicon MOSFETs have a cut-off frequency in range of few tens of GHz. However, active research in recent years has established that Si MOS transistors can be used as power detectors for electromagnetic waves up to frequencies in the THz range, i. e. far beyond their cut-off frequencies. The detection is based on self-mixing of THz signals in the transistor channel resulting in a photoresponse in the form of a DC voltage proportional to the power of incident radiation. Based on this principle, a 1k pixel video camera for 0.7- 1.1 THz imaging application has been recently realised using 65 nm CMOS technology. The transistor operation in THz power detectors differs fundamentally from the operation in typical digital and analog circuits. herefore, it should be expected that the optimum transistor design for THz detectors is different from that of the standard CMOS transistors. Device simulations to study the impact of transistor geometries and doping profiles on the performance of THz detectors can be very useful and such analysis can be used to suggestfor improvements in transistor design. In this work, detailed TCAD simulations to study of the impact of NMOS device design and doping distribution on detector performance are presented. Extensive time-domain simulations are used to obtain the THz response and the impact of different device parasitics and design parameters on this response is analyzed. Improvements in the device design are suggested to enhance the performance of Silicon MOSFET THz detectors. en_US
dc.description.statementofresponsibility by Ritesh Jain
dc.format.extent xi, 83 p.; col.; ill; 24 cm. + 1 CD-ROM
dc.language.iso en en_US
dc.publisher Indian Institute of Technology, Gandhinagar en_US
dc.subject CMOS en_US
dc.subject High-speed communication en_US
dc.subject MOS en_US
dc.subject MOSFETs en_US
dc.subject Terahertz en_US
dc.title Terahertz detection with CMOS: Simulation Studies en_US
dc.type Thesis en_US
dc.contributor.department Electrical Engineering
dc.description.degree M.Tech.


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