Optimization of Si MOS transistors for THz detection using TCAD simulation

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dc.contributor.author Jain, Ritesh
dc.contributor.author Rucker, Holger
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 2014 International Conference on Simulation of Semiconductor Processes and Devices
dc.coverage.spatial Yokohama, JP.
dc.date.accessioned 2014-10-21T13:56:03Z
dc.date.available 2014-10-21T13:56:03Z
dc.date.issued 2014-09-09
dc.identifier.citation Jain, Ritesh; Rucker, Holger and Mohapatr, Nihar R., "Optimization of Si MOS transistors for THz detection using TCAD simulation", in 2014 International Conference on Simulation of Semiconductor Processes and Devices, Yokohama, JP, Sep. 9-11, 2014. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/1459
dc.description.abstract We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time- domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances. en_US
dc.description.statementofresponsibility by Ritesh Jain, Holger Rucker and Nihar R. Mohapatra
dc.language.iso en en_US
dc.publisher Simulation of Semiconducor Processes Devices (SISPAD) en_US
dc.subject MOS transistors en_US
dc.subject Ransistor channel en_US
dc.subject TCAD simulation en_US
dc.title Optimization of Si MOS transistors for THz detection using TCAD simulation en_US
dc.type Article en_US


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