Effect of pregate carbon implant on narrow Width behavior and performance of high-k metal-gate nMOS transistors

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dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.author Ganeriwala, Mohit D.
dc.contributor.author Sivanaresh M., Satya
dc.date.accessioned 2016-06-20T12:49:49Z
dc.date.available 2016-06-20T12:49:49Z
dc.date.issued 2016-07
dc.identifier.citation Mohapatra, Nihar R.; Ganeriwala, Mohit D. and Sivanaresh M, Satya, “Effect of pregate carbon implant on narrow Width behavior and performance of high-k metal-gate nMOS transistors”, IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2016.2570600, vol. 63, no. 7, pp. 2708-2713, Jul. 2016. en_US
dc.identifier.issn 0018-9383
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/2337
dc.identifier.uri http://dx.doi.org/10.1109/TED.2016.2570600
dc.description.abstract This paper experimentally shows the reduction of anomalous narrow width effect (NWE) observed in gate-first high- k metal-gate (HKMG) nMOS transistors by using pregate carbon implants. The experiments are performed with different carbon implant doses and energies, in collaboration with a semiconductor foundry. The 28-nm gate-first HKMG CMOS technology is used as the baseline flow. The physical mechanisms responsible for this improvement are identified and explained in detail. It is further shown that the pregate carbon implant used to suppress the NWE also increases junction leakage, improves the device electrostatics, and improves the universal curve.
dc.description.statementofresponsibility by Nihar R Mohapatra, Mohit D. Ganeriwala and Satya Sivanaresh M.
dc.format.extent Vol. 63, no. 7, pp. 2708-2713
dc.language.iso en_US en_US
dc.publisher Institute of Electrical and Electronics Engineers
dc.title Effect of pregate carbon implant on narrow Width behavior and performance of high-k metal-gate nMOS transistors en_US
dc.type Article en_US
dc.relation.journal IEEE Transactions on Electron Devices


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