Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET

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dc.contributor.author Dutta, Sangya
dc.contributor.author Kumar, Vinay
dc.contributor.author Shukla, Aditya
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.author Ganguly, Udayan
dc.date.accessioned 2017-09-11T11:40:51Z
dc.date.available 2017-09-11T11:40:51Z
dc.date.issued 2017-12
dc.identifier.citation Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R. and Ganguly, Udayan, "Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET", Scientific Reports, DOI: 10.1038/s41598-017-07418-y, vol. 7, no. 1, Dec. 2017. en_US
dc.identifier.issn 2045-2322
dc.identifier.uri http://dx.doi.org/10.1038/s41598-017-07418-y
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/3124
dc.description.abstract Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~1011 neuron based) large neural networks. en_US
dc.description.statementofresponsibility by Sangya Dutta, Vinay Kumar, Aditya Shukla, Nihar R. Mohapatra and Udayan Ganguly
dc.format.extent vol. 7, no. 1
dc.language.iso en_US en_US
dc.publisher Nature Publishing Group en_US
dc.title Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET en_US
dc.type Article en_US
dc.relation.journal Scientific Reports


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