Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors

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dc.contributor.author Bhoir, Mandar S.
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),
dc.coverage.spatial Granada,ES
dc.date.accessioned 2018-08-23T05:49:53Z
dc.date.available 2018-08-23T05:49:53Z
dc.date.issued 2018-03-19
dc.identifier.citation Bhoir, Mandar S. and Mohapatra, Nihar R., "Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors", in the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, ES, Mar. 19-21, 2018. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/3876
dc.description.statementofresponsibility by Mandar .S. Bhoir and Nihar R. Mohapatra
dc.language.iso en en_US
dc.title Impact of BOX thickness and ground-plane on non-linearity of UTBB FD-SOI MOS transistors en_US
dc.type Article en_US


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