Abstract:
Considering the demand of III�V multigate (MUG) transistors for next-generation CMOS technologies, a compactmodel is required to test their performance in different circuits. The low effective mass and highly confined geometry of these MUG devices demand the use of computationally expensive coupled Poisson�Schr�dinger (PS) solver for terminal charges and surface potential. In this paper, we propose an approximation, which decouples the PS equations and enables the development of a computationally efficient analytical model. The surface potential and semiconductor charge equations for III�V low effective mass channel cylindrical nanowire (NW) transistors are derived using the proposed approximation. The proposed model is physics-based and does not include any empirical parameters. The accuracy of the model is verified across NWs of different sizes andmaterials using the data from the 2-D PS solver and found to be accurate.,