A computationally efficient quantum-corrected poisson solver for accurate device simulation of multi-gate FETs

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dc.contributor.author Ojha, Apoorva
dc.contributor.author Mohapatra, Nihar Ranjan
dc.date.accessioned 2019-07-16T09:58:27Z
dc.date.available 2019-07-16T09:58:27Z
dc.date.issued 2019-10
dc.identifier.citation Ojha, Apoorva and Mohapatra, Nihar R., �A computationally efficient quantum-corrected poisson solver for accurate device simulation of multi-gate FETs�, Solid-State Electronics, DOI: 10.1016/j.sse.2019.107625, vol. 160, Oct. 2019. en_US
dc.identifier.issn 0038-1101
dc.identifier.uri https://doi.org/10.1016/j.sse.2019.107625
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/4609
dc.description.abstract The quantum mechanical effects have become an important phenomenon in extremely scaled multi-gate MOS devices and therefore the self-consistent solution of Poisson�s and Schrodinger�s equation (P-S solver) is needed to get accurate charge and potential profiles. The commercial device simulators take impractically high computation time for the P-S solver. So, there is a need for a computationally efficient methodology which is fast as well as accurate. In this paper, a quantum corrected Poisson solver is developed which serves this purpose. The effects of quantum confinement due to geometry of the device and the electric field are captured accurately by modifying the density of states and incorporating correction in carrier charge profiles. The developed model is physics-based, accurate, and computationally efficient in comparison to the existing quantum correction models.
dc.description.statementofresponsibility by Apoorva Ojha and Nihar R. Mohapatra
dc.format.extent vol. 160
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.subject Poisson solver en_US
dc.subject Poisson-Schrodinger solver en_US
dc.subject Dispersion relationship en_US
dc.subject Quantum mechanical effects en_US
dc.subject Density of states en_US
dc.subject Device simulator en_US
dc.subject Geometrical confinement en_US
dc.subject MuGFETs en_US
dc.title A computationally efficient quantum-corrected poisson solver for accurate device simulation of multi-gate FETs en_US
dc.type Article en_US
dc.relation.journal Solid-State Electronics


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