The hot carrier (HC) induced degradation has become a major concern in advanced CMOS technologies because of non-scalable VDD. In this work, we have shown that the HC induced degradation in gate-first HKMG nMOS transistors ...

This paper experimentally shows the reduction of anomalous narrow width effect (NWE) observed in gate-first high- k metal-gate (HKMG) nMOS transistors by using pregate carbon implants. The experiments are performed with ...

This paper discusses in detail the effect of small geometries on the performance of NMOS transistors fabricated using a 28-nm gate-first CMOS technology. It is shown that the threshold voltage and transconductance of the ...

The hardware realization of spiking neural network (SNN) requires a compact and energy efficient electronic analog to the biological neuron. A knob to tune the response of the as-fabricated neuron allows the network to ...