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  • Ganeriwala, Mohit D.; Ruiz, Francisco G.; Marin, Enrique G.; Mohapatra, Nihar Ranjan (Springer Nature, 2019-08)
    The III–V materials have a highly non-parabolic band structure that significantly affects the MOS transistor electrostatics. The compact models used to simulate circuits involving III–V MOS transistors must account for ...
  • Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars Ake; Mitard, Jerome; Terzeiva, Valentina; Horiguchi, Naoto; Mohapatra, Nihar Ranjan (IEEE, 2019-08)
    This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the trans-conductance degrades and output ...

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