Development of low-cost silicon BiCMOS technology for RF applications

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dc.contributor.author Balanethiram, S.
dc.contributor.author Pande, S.
dc.contributor.author Singh, A. K.
dc.contributor.author Umapathi, B.
dc.contributor.author Jatana, H. S.
dc.contributor.author Mohapatra, Nihar R.
dc.contributor.author Chakravorty, A.
dc.contributor.other 2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)
dc.coverage.spatial Hyderabad, IN
dc.date.accessioned 2020-02-22T06:10:44Z
dc.date.available 2020-02-22T06:10:44Z
dc.date.issued 2019-02-25
dc.identifier.citation Balanethiram, S.; Pande, S.; Singh, A. K.; Umapathi, B.; Jatana, H. S.; Mohapatra, Nihar R. and Chakravorty, A., "Development of low-cost silicon BiCMOS technology for RF applications", in the 2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India), Hyderabad, IN, Feb. 25-27, 2019. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/5093
dc.description.statementofresponsibility by S. Balanethiram, S. Pande, A. K. Singh, B. Umapathi, H. S. Jatana, Nihar R Mohapatra and A. Chakravorty
dc.language.iso en_US en_US
dc.title Development of low-cost silicon BiCMOS technology for RF applications en_US
dc.type Article en_US


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