Annealing effected Nb dopant activation and optoelectronic properties in anatase thin films

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dc.contributor.author Manwani, Krishna
dc.contributor.author Panda, Emila
dc.coverage.spatial United Kingdom
dc.date.accessioned 2021-01-15T13:10:01Z
dc.date.available 2021-01-15T13:10:01Z
dc.date.issued 2021-02
dc.identifier.citation Manwani, Krishna and Panda, Emila, “Annealing effected Nb dopant activation and optoelectronic properties in anatase thin films”, Journal of Materials Science: Materials in Electronics, DOI: 10.1007/s10854-020-05076-x, vol. 32, no. 3, pp. 3273-3285, Feb. 2021. en_US
dc.identifier.issn 0957-4522
dc.identifier.issn 1573-482X
dc.identifier.uri https://doi.org/10.1007/s10854-020-05076-x
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/6209
dc.description.abstract Nb-doped anatase (NTO) thin film is a promising alternative to the conventionally used transparent conductors. However, its optoelectronic properties are strongly dependent on the fabrication condition. To this end, here the influence of the post-deposition annealing parameters on the dopant activation and thereby developed optoelectronic properties of these films are studied. In this regard,?~?130 nm thick NTO films are first deposited on unheated quartz substrates using RF magnetron sputtering and then annealed at a range of temperature and time at ? 2.2?�?10�4 Pa. Though all these post-annealed films crystallized as anatase, their crystallinity, dopant atom activation and optoelectronic properties are significantly influenced by the annealing process parameters. Only at an optimized annealing condition highest crystallinity in the film along with the most effective Nb doping in Ti lattice sites is seen, which eventually yields to the highest carrier concentration of 0.84?�?1021 cm?3, carrier mobility of 1.86 cm2/V-s and optical bandgap of 3.51 eV. Consequently, this film shows the lowest electrical resistivity of 4.01?�?10�3 ? cm. Moreover, in this paper, the mechanism of dopant atom activation as a function of annealing condition and thereby linked altered optoelectronic properties are discussed in detail.
dc.description.statementofresponsibility by Krishna Manwani and Emila Panda
dc.format.extent vol. 32, no. 3, pp. 3273-3285
dc.language.iso en_US en_US
dc.publisher Springer en_US
dc.title Annealing effected Nb dopant activation and optoelectronic properties in anatase thin films en_US
dc.type Article en_US
dcterms.extent
dc.relation.journal Journal of Materials Science: Materials in Electronics


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