Effect of channel dimensions and spacer material on drain saturation voltage (VDS,SAT ) of sub-10nm Wf in regime FinFETs

Effect of channel dimensions and spacer material on drain saturation voltage (VDS,SAT ) of sub-10nm Wf in regime FinFETs

Sharma, Pratik
URI: https://repository.iitgn.ac.in/handle/123456789/7183
Date: 2021

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