Influence of CIGS film thickness on the microstructure, bulk optoelectronic, and surface electrical properties

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dc.contributor.author Bandaru, Narendra
dc.contributor.author Panda, Emila
dc.coverage.spatial United Kingdom
dc.date.accessioned 2021-11-10T09:32:16Z
dc.date.available 2021-11-10T09:32:16Z
dc.date.issued 2021-10
dc.identifier.citation Bandaru, Narendra and Panda, Emila, "Influence of CIGS film thickness on the microstructure, bulk optoelectronic, and surface electrical properties", Journal of Materials Science: Materials in Electronics, DOI: 10.1007/s10854-021-07238-x, Oct. 2021. en_US
dc.identifier.issn 0957-4522
dc.identifier.issn 1573-482X
dc.identifier.uri https://doi.org/10.1007/s10854-021-07238-x
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/7244
dc.description.abstract The present work addresses the changing microstructure, bulk optoelectronic, and surface electrical properties of sputter deposited Cu(In,Ga)Se2 (CIGS) films on the soda lime glass (SLG) substrates as a function of altered film thickness. To this end, these films were deposited by varying the deposition time from 180 to 540 min in radio frequency (RF) magnetron sputtering and by using a low substrate temperature of 523 K. A range of experimental techniques were then used to investigate the microstructure, bulk optoelectronic, and surface electrical properties of these films. All these films are found to grow in single phase, chalcopyrite crystal structure, and with dominant (112) orientation, though the overall composition of these films is found to slightly alter. Moreover, a semimetallic to semiconductor transition in the thickening CIGS film is seen, which is then correlated with their hole concentration. Based on these observations and the positions of the Fermi energy, a possible theory regarding the presence of the types, quantities, and positions of the electronic defect states and their variations by thickening the CIGS film is discussed. Both the transport and optical band gaps (Eg) are found to follow the same trend, which could also be related with the compositional variation in these films. Moreover, CIGS film deposited for 540 min is found to yield a film thickness of about 2.85μm, with hole concentration of 2.17 × 10(to the power of 17) cm−3 and optical band gap of 1.16 eV; optoelectronic properties appropriate for an absorber layer in photovoltaic application.
dc.description.statementofresponsibility by Narendra Bandaru and Emila Panda
dc.language.iso en_US en_US
dc.publisher Springer en_US
dc.subject CIGS films en_US
dc.subject SLG substrates en_US
dc.subject Chalcopyrite crystal structure en_US
dc.subject Fermi energy en_US
dc.subject Optical band gaps en_US
dc.title Influence of CIGS film thickness on the microstructure, bulk optoelectronic, and surface electrical properties en_US
dc.type Article en_US
dc.relation.journal Journal of Materials Science: Materials in Electronics`


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