Angstrom scale ionic memristors' Engineering with van der waals materials: a route to highly tunable memory tates

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dc.contributor.author Dhal, Biswabhusan
dc.contributor.author Animesh, Puzari
dc.contributor.author Yeh, Li-Hsien
dc.contributor.author Kalon, Gopinadhan
dc.coverage.spatial United States of America
dc.date.accessioned 2024-12-12T05:11:32Z
dc.date.available 2024-12-12T05:11:32Z
dc.date.issued 2024-12
dc.identifier.citation Dhal, Biswabhusan; Animesh, Puzari; Yeh, Li-Hsien and Kalon, Gopinadhan, "Angstrom scale ionic memristors' Engineering with van der waals materials: a route to highly tunable memory tates", ACS Applied Materials & Interfaces, DOI: 10.1021/acsami.4c14521, Dec. 2024.
dc.identifier.issn 1944-8244
dc.identifier.issn 1944-8252
dc.identifier.uri https://doi.org/10.1021/acsami.4c14521
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/10828
dc.description.abstract Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite result in highly confined channels of size 3–5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the overscreening of counterions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion–ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices.
dc.description.statementofresponsibility by Biswabhusan Dhal, Puzari Animesh, Li-Hsien Yeh and Gopinadhan Kalon
dc.language.iso en_US
dc.publisher American Chemical Society
dc.subject Ionic memristor
dc.subject 2D angstrom fluidic channels
dc.subject Vermiculite clay
dc.subject Ion exchange membrane
dc.subject Asymmetric channels
dc.subject Charge inversion (monovalent multivalent)
dc.title Angstrom scale ionic memristors' Engineering with van der waals materials: a route to highly tunable memory tates
dc.type Article
dc.relation.journal ACS Applied Materials & Interfaces


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