dc.contributor.author |
Dhal, Biswabhusan |
|
dc.contributor.author |
Animesh, Puzari |
|
dc.contributor.author |
Yeh, Li-Hsien |
|
dc.contributor.author |
Kalon, Gopinadhan |
|
dc.coverage.spatial |
United States of America |
|
dc.date.accessioned |
2024-12-27T10:47:02Z |
|
dc.date.available |
2024-12-27T10:47:02Z |
|
dc.date.issued |
2024-12 |
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dc.identifier.citation |
Dhal, Biswabhusan; Animesh, Puzari; Yeh, Li-Hsien and Kalon, Gopinadhan, "Angstrom scale ionic memristors' Engineering with van der waals materials- a route to highly tunable memory states", arXiv, Cornell University Library, DOI: arXiv:2412.05051, Dec. 2024. |
|
dc.identifier.uri |
http://arxiv.org/abs/2412.05051 |
|
dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/10885 |
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dc.description.abstract |
Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite, result in highly confined channels of size 3-5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the over-screening of counter-ions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion-ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices. |
|
dc.description.statementofresponsibility |
by Biswabhusan Dhal, Puzari Animesh, Li-Hsien Yeh and Gopinadhan Kalon |
|
dc.language.iso |
en_US |
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dc.publisher |
Cornell University Library |
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dc.title |
Angstrom scale ionic memristors' Engineering with van der waals materials- a route to highly tunable memory states |
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dc.type |
Article |
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dc.relation.journal |
arXiv |
|