| dc.contributor.author |
Tewari, Mohit |
|
| dc.contributor.author |
Amaram, Ashutosh Krishna |
|
| dc.contributor.author |
Agarwal, Tarun |
|
| dc.coverage.spatial |
Hong Kong |
|
| dc.date.accessioned |
2025-08-01T07:02:19Z |
|
| dc.date.available |
2025-08-01T07:02:19Z |
|
| dc.date.issued |
2025-03-09 |
|
| dc.identifier.citation |
Tewari, Mohit; Amaram, Ashutosh Krishna and Agarwal, Tarun, "Multi-physics modeling of Au/MoS2/Au memristors combining molecular dynamics and electro-thermal simulations", in the 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2025), HK, Mar. 09-12, 2025. |
|
| dc.identifier.uri |
https://doi.org/10.1109/EDTM61175.2025.11040179 |
|
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/11716 |
|
| dc.description.abstract |
The state transition in Au/MoS2/Au memristor across several cycles is analysed in this work using a multiphysics modeling framework that combines electrothermal Finite Element Method (FEM) and Reactive Molecular Dynamics (MD) simulations. MD simulations provide the field-driven realistic atomistic filament structure of HRS and LRS, while temperatures from FEM simulations are fed back into MD for state transitions. The framework demonstrates that the HRS is caused by constriction of the filament near the top Au and monolayer MoS2 interface rather than complete filament rupture. |
|
| dc.description.statementofresponsibility |
by Mohit Tewari, Ashutosh Krishna Amaram and Tarun Agarwal |
|
| dc.language.iso |
en_US |
|
| dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
|
| dc.subject |
ReRAM |
|
| dc.subject |
2D materials and Reactive Molecular Dynamics |
|
| dc.subject |
Electro-thermal Simulations |
|
| dc.title |
Multi-physics modeling of Au/MoS2/Au memristors combining molecular dynamics and electro-thermal simulations |
|
| dc.type |
Conference Paper |
|
| dc.relation.journal |
9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2025) |
|