A soft error self-resilience radiation-hardened 14T SRAM for aerospace applications

Abstract

Various charged particles in space threaten memory circuit integrity and dependability, including photons, alpha particles, and high-energy ions outside the Low Earth Orbit region. These particles particularly affect conventional 6T SRAM by disrupting stored bits, leading researchers to explore radiation-hardened SRAM chips and the addition of extra nodes to memory cells to recover lost data. A novel self resilience radiation-hardened 14T (SRRH-14T) SRAM cell with redundant nodes is presented in this work to solve the soft error problem. The suggested SRRH-14T memory performance compared to well-known radiation-hardened cells, such as 6T-SRAM, Quatro-10T, SEA-14T, RH-14T, QCCS-12T, and RRS-14T. The proposed SRRH-14T memory cell applies to a minimal sensitive node layout area separation to protect against multiple node interruptions. Additionally, the proposed SRRH-14T demonstrates performance enhancements of 1.22x, 1.03x, 1.09x, 1.06x, and 1.02x relative to 6T-SRAM, Quatro-10T, SEA-14T, RH-14T, and RRS-14T, respectively.