Predictive TCAD modeling for customized ESD protection in CMOS 65nm technology having low clamping voltage for 10V-neurostimulator

dc.contributor.advisor	Lashkare, Sandip
dc.contributor.author	Maheshwari, Navin
dc.date.accessioned	2025-09-11T15:52:55Z
dc.date.available	2025-09-11T15:52:55Z
dc.date.issued	2025
dc.identifier.citation	Maheshwari, Navin. (2025). Predictive TCAD modeling for customized ESD protection in CMOS 65nm technology having low clamping voltage for 10V-neurostimulator. Gandhinagar: Indian Institute of Technology Gandhinagar, 51p. (Acc. No.: T01466)
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/12023
dc.description.statementofresponsibility	by Navin Maheshwari
dc.format.extent	xi, 51p.: hbk.: 30 cm
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	23210063
dc.subject	M. Tech
dc.subject	Electrical Engineering
dc.subject	Effective Electrostatic Discharge (ESD)
dc.subject	CMOS technology
dc.subject	Integrated Circuits
dc.subject	Bipolar Transistor
dc.subject	Machine Model
dc.subject	Human Body Model
dc.title	Predictive TCAD modeling for customized ESD protection in CMOS 65nm technology having low clamping voltage for 10V-neurostimulator
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	M.Tech.