Meihar, Paritosh; Srinu, Rowtu; Saraswat, Vivek; Lashkare, Sandip; Mulaosmanovic, Halid; Singh, Ajay Kumar; Dunkel, Stefan; Beyer, Sven; Ganguly, Udayan
(Institute of Electrical and Electronics Engineers (IEEE), 2024-04)
The HfO2-based ferroelectric field-effect transistor (FeFET) has become a center of attraction for nonvolatile memory application because of their low power, fast switching speed, high scalability, and CMOS compatibility. ...