Fabrication of silicon nanohorns via soft lithography technique for photoelectrochemical application

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dc.contributor.author Khanna, Sakshum
dc.contributor.author Utsav
dc.contributor.author Marathey, Priyanka
dc.contributor.author Paneliya, Sagar
dc.contributor.author Vanpariya, Anjali
dc.contributor.author Ray, Abhijit
dc.contributor.author Banerjee, Rupak
dc.contributor.author Mukhopadhyay, Indrajit
dc.date.accessioned 2020-10-23T15:17:43Z
dc.date.available 2020-10-23T15:17:43Z
dc.date.issued 2021-04
dc.identifier.citation Khanna, Sakshum; Utsav; Marathey, Priyanka; Paneliya, Sagar; Vanpariya, Anjali; Ray, Abhijit; Banerjee, Rupak and Mukhopadhyay, Indrajit, “Fabrication of silicon nanohorns via soft lithography technique for photoelectrochemical application”, International Journal of Hydrogen Energy, DOI: 10.1016/j.ijhydene.2020.09.076, vol. 46, no. 30, pp. 16404-16413, Apr. 2021. en_US
dc.identifier.issn 0360-3199
dc.identifier.uri https://doi.org/10.1016/j.ijhydene.2020.09.076
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/5793
dc.description.abstract Water splitting for H2 production by absorbing sunlight is broadly used as a common technique to counter existing energy crisis and environmental problems, caused by extreme use of fossil fuels. We report a versatile and facile method to fabricate ordered Silicon nanohorns (SiNHs) by employing prefabricated metal nano-gap template on Si. The close-packed monolayer is used to develop the nanohole template, which enables the generation of SiNHs via metal-assisted controlled chemical etching. By varying monolayer parameters and etching sequences, SiNHs with desired dimensions were obtained. Growth along the crystalline plane of the base substrate ?100?, with a consistent bent at the tip of the SiNH, has been observed. The resulting SiNHs exhibited enhanced photoelectrochemical properties, with short-circuit photocurrent density more than four times higher than that of the planer Si along with enhanced trapping of photogenerated carriers. A photocurrent density of ~4.8 mA/cm2 was observed at a potential of -1 V vs. RHE. Further, the electrochemical impedance study (EIS) was carried out to understand the photoelectrochemical activity and charge transfer kinetics of the SiNHs system. These nanostructures enhance light absorption and may be one of the low-cost alternatives for optical devices, sensors, and hydrogen evolution.
dc.description.statementofresponsibility by Sakshum Khanna, Utsav, Priyanka Marathey, Sagar Paneliya, Anjali Vanpariya, Abhijit Ray, Rupak Banerjee and Indrajit Mukhopadhyay
dc.language.iso en_US en_US
dc.publisher Elsevier en_US
dc.subject Silica Monolayer en_US
dc.subject Sintering en_US
dc.subject Non-close Pack en_US
dc.subject Silicon Nano-horns (SiNHs) en_US
dc.title Fabrication of silicon nanohorns via soft lithography technique for photoelectrochemical application en_US
dc.type Article en_US
dc.relation.journal International Journal of Hydrogen Energy


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